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february 2011 doc id 18452 rev 1 1/21 21 STD3LN62K3, stf3ln62k3 stp3ln62k3, stu3ln62k3 n-channel 620 v, 2.5 ? , 2.5 a supermesh3? power mosfet dpak, to-220fp, to-220, ipak features 100% avalanche tested extremely high dv/dt capability very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected application switching applications description these devices are made using the supermesh3? power mosfet technology that is obtained via improvements applied to stmicroelectronics? s upermesh? technology combined with a new optimized vertical structure. the resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p d STD3LN62K3 stf3ln62k3 stp3ln62k3 stu3ln62k3 620 v < 3 ? 2.5 a 2.5 a (1) 2.5 a 2.5 a 1. limited by package 45 w 20 w 45 w 45 w 3 2 1 1 2 3 1 3 to-220 dpak to-220fp ipak 1 2 3 d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging STD3LN62K3 3ln62k3 dpak tape and reel stf3ln62k3 to-220fp tu b e stp3ln62k3 to-220 stu3ln62k3 ipak www.st.com
contents STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 2/21 doc id 18452 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 electrical ratings doc id 18452 rev 1 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 dpak ipak to-220fp v ds drain-source voltage (v gs = 0) 620 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2.5 2.5 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 1.6 1.6 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 10 10 (1) a p tot total dissipation at t c = 25 c 45 20 w derating factor 0.36 0.16 w/c v esd(g-s) gate source esd (hbm-c = 100 pf, r = 1.5 k ?) 2500 v dv/dt (3) 3. i sd 2.5 a, di/dt 400 a/s, peak v ds < v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter to-220 dpak ipak to-220fp unit r thj-case thermal resistance junction-case max 2.78 6.25 c/w r thj-pcb thermal resistance junction-pcb max 50 c/w r thj-amb thermal resistance junction-amb max 62.5 100 62.5 c/w t l maximum lead temperature for soldering purpose 300 300 c table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 90 mj
electrical characteristics STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 4/21 doc id 18452 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 620 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 1.25 a 2.5 3 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 386 30 5 - pf pf pf c o(tr) (1) 1. c oss eq . time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss eq. capacitance time related v gs = 0, v ds = 0 to 496 v -20-pf c o(er) (2) 2. c oss eq . energy related is defined as a constant equivalen t capacitance giving the same stored energy as c oss when v d s increases from 0 to 80% v dss eq. capacitance energy related -28-pf r g intrinsic gate resistance f = 1 mhz open drain - 7 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 496 v, i d = 2.5 a, v gs = 10 v (see figure 20 ) - 17 2.7 10.7 - nc nc nc
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 electrical characteristics doc id 18452 rev 1 5/21 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 310 v, i d =1.25 a, r g = 4.7 ?, v gs = 10 v (see figure 19 ) - 9 7 30 27 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 2.5 10 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2.5 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.5 a, di/dt = 100 a/s v dd = 60 v (see figure 24 ) - 240 1200 10 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 24 ) - 265 1400 11 ns nc a table 9. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have specif ically been designed to enhanc e not only the device?s esd capability, but also to make th em safely absorb possible voltage tr ansients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protec t the device?s integrity. these int egrated zener diodes thus avoid the usage of external components. gate-source breakdown voltage igs= 1 ma (open drain) 30 - v
electrical characteristics STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 6/21 doc id 18452 rev 1 2.1 electrical characteristics (c urves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for dpak, ipak figure 7. thermal impedance for dpak, ipak i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 9 3 6v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 9 3 7v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 9 38 v1
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 electrical characteristics doc id 18452 rev 1 7/21 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 3 2 1 0 0 10 v d s (v) 20 (a) 5 15 25 4 5 5v 6v 7v v g s =10v 6 am0 8 9 3 9v1 i d 1.5 1.0 0.5 0 0 4 v g s (v) 8 (a) 2 6 2.0 1 9 7 5 3 3 .5 3 .0 2.5 4.0 v d s =15v am0 8 940v1 v g s 6 4 2 0 0 5 q g (nc) (v) 8 10 15 10 v dd =496v i d =2.5a 12 3 00 200 100 0 400 500 v d s v g s am0 8 941v1 r d s (on) 2.5 2.4 2. 3 2.2 0 1.0 i d (a) ( ? ) 0.5 1.5 2.6 2.7 2. 8 2.9 v g s =10v 2.0 2.5 am0 8 942v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 8 94 3 v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 500 am0 8 944v1
electrical characteristics STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 8/21 doc id 18452 rev 1 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. normalized bv dss vs temperature figure 17. source-drain diode forward characteristics figure 18. maximum avalanche energy vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 am0 8 945v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0.0 i d =1.2a v g s =10v am0 8 946v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.10 1.05 am0 8 947v1 v s d 0 0.4 i s d (a) (v) 0.2 1.0 0.6 0. 8 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =150c t j =25c 1.4 1.2 1.6 1. 8 am0 8 94 8 v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 10 20 3 0 40 120 140 50 60 70 8 0 90 100 i d =2.5 a v dd =50 v am0 8 949v1
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 test circuits doc id 18452 rev 1 9/21 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive wavefo rm figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 10/21 doc id 18452 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 package mechanical data doc id 18452 rev 1 11/21 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 12/21 doc id 18452 rev 1 figure 25. dpak (to-252) drawing 006 8 772_g
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 package mechanical data doc id 18452 rev 1 13/21 table 11. ipak (to-251) mechanical data dim. mm. min. typ max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.3 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10 o
package mechanical data STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 14/21 doc id 18452 rev 1 figure 26. ipak (to-251) drawing 006 8 771_h am09214v1
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 package mechanical data doc id 18452 rev 1 15/21 table 12. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
package mechanical data STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 16/21 doc id 18452 rev 1 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 package mechanical data doc id 18452 rev 1 17/21 figure 28. to-220fp drawing table 13. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
packaging mechanical data STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 18/21 doc id 18452 rev 1 5 packaging mechanical data figure 29. dpak footprint (a) table 14. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a. all dimension ar e in millimeters 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 packaging mechanical data doc id 18452 rev 1 19/21 figure 30. tape for dpak (to-252) figure 31. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 20/21 doc id 18452 rev 1 6 revision history table 15. document revision history date revision changes 04-feb-2011 1 first release.
STD3LN62K3, stf3ln62k3, stp3ln62k3, stu3ln62k3 doc id 18452 rev 1 21/21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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